15 October 2012 Design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491F (2012); doi: 10.1117/12.925703
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
This paper describes the design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches with modified coplanar waveguide (CPW) configuration for X-band and Ku-band applications exhibiting high isolation and low insertion loss. By modifying the basic CPW structure for a six-strip membrane having length 720 μm, the resonant frequency can be reduced from 33.5 GHz to 13.5 GHz with isolation as high as -30 dB(-63 dB at resonant frequency) in Ku-band. Similar results are also found in case SPST and SPDT switches with other membrane types.
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Manas Kumar Lenka, Amit Sharma, Jaibir Sharma, Amitava DasGupta, "Design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491F (15 October 2012); doi: 10.1117/12.925703; http://dx.doi.org/10.1117/12.925703
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KEYWORDS
Switches

Single point diamond turning

Ku band

Microelectromechanical systems

X band

Inductance

Signal attenuation

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