15 October 2012 FEM simulation of CMUT cell for NDT application
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491H (2012) https://doi.org/10.1117/12.926046
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
This paper presents the simulation of various electromechanical performance parameters for an efficient and broadband air coupled Capacitive Micromachined Ultrasonic Transducer (CMUT) for Non Destructive Testing and Evaluation (NDT/NDE) using FEM simulation tool, Coventor Ware. The non contact ultrasonic inspection performed in ambient air reduces the complexity and cost. Various critical parameters like collapse voltage, resonant frequency, coupling coefficient, squeeze film damping, bandwidth, quality factor and transient response of the single cell of CMUT are discussed. We employ a hexagonal CMUT cell for the modeling to improve the CMUT’s transmission/reception efficiency as the average membrane displacement is high.
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. Aditi, . Aditi, Ravindra Mukhiya, Ravindra Mukhiya, Ram Gopal, Ram Gopal, V. K. Khanna, V. K. Khanna, } "FEM simulation of CMUT cell for NDT application", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491H (15 October 2012); doi: 10.1117/12.926046; https://doi.org/10.1117/12.926046
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