15 October 2012 Development and standardization of porous silicon for application as a working electrode in electrochemical immunosensor
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491I (2012); doi: 10.1117/12.923196
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Electrectrochemical immunosensors have diverse applications in areas like medical diagnostics, food industry, environmental monitoring etc. The conductive materials like Indium Tin oxide coated glass (ITO), glassy carbon, porous silicon (PS) etc. can be useful as working electrode for electrochemical immunosensor applications. But the porous silicon is particularly attractive for this application due to its modified properties like very large surface area to volume ratio, surface dependent properties (electrical and optical), photoluminescence at room temperature and biocompatibility. In this paper porous silicon is investigated for development as working electrode for label free model immunosensor based on Human IgG.
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Vinita Kumari, Prabhash Mishra, S. S. Islam, "Development and standardization of porous silicon for application as a working electrode in electrochemical immunosensor", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491I (15 October 2012); doi: 10.1117/12.923196; http://dx.doi.org/10.1117/12.923196
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KEYWORDS
Picosecond phenomena

Electrodes

Silicon

Standards development

Scanning electron microscopy

Luminescence

Carbon

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