15 October 2012 Characterization of traps in SiGe:C channel heterojunction PMOSFETs
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491L (2012); doi: 10.1117/12.924516
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
In this work, inelastic tunneling spectroscopy (IETS) of SiGe:C channel heterojunction PMOSFETs has been used to study the modes of vibrations (due to molecular species and phonons) present in the tunneling junctions and also to characterize the traps responsible for trapping/de-trapping of channel carriers. Peaks observed in the second derivative spectra of the drain-current provided information for identification of various traps and defects in the metal-insulatorsemiconductor (MIS) structures for thin tunneling oxide present in the SiGe:C PMOSFETs. Both the optical and acoustic phonons are observed for SiGe, SiO2 and Si-C. From the spectra obtained by varying gate voltage between 180-350 mV (in both forward and reverse bias), the trapping/de-trapping process has been observed which comprises of charge trapping and trap-assisted conduction phenomena. The traps that take part in the trapping of carriers are also identified from the results.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Mukherjee, C. K. Maiti, "Characterization of traps in SiGe:C channel heterojunction PMOSFETs", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491L (15 October 2012); doi: 10.1117/12.924516; http://dx.doi.org/10.1117/12.924516
PROCEEDINGS
6 PAGES


SHARE
KEYWORDS
Phonons

Heterojunctions

Spectroscopy

Oxides

Silica

Silicon

Acoustics

Back to Top