15 October 2012 An analytical potential model for threshold voltage of DGMOSFET with consideration of mobile charges
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491N (2012); doi: 10.1117/12.924805
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
An analytical potential model for threshold voltage of asymmetric Double Gate MOSFET (DG MOSFET) is derived by considering mobile charges. A cubiod function approximation is made for potential distribution of analytical solution of 2-D Poisson's equation. Different gate work functions are considered for both tied and independent DG MOSFET.The threshold voltage behavior of DG MOSFET for different body and oxide thicknesses is investigated. The analytical solution of threshold voltage is verified through TCAD simulation and is compared with existing threshold voltage model reported without consideration of mobile charges. The model developed considering the mobile charges, agree satisfactorily with other theoretical predictions.
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K. Sivasankaran, Kishore Pilli, P. S. Mallick, "An analytical potential model for threshold voltage of DGMOSFET with consideration of mobile charges", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491N (15 October 2012); doi: 10.1117/12.924805; http://dx.doi.org/10.1117/12.924805
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KEYWORDS
Field effect transistors

Oxides

Silicon

TCAD

Instrument modeling

Ions

Computer aided design

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