15 October 2012 Diffusion thermopower in graphene nanoribbons: effect of subbands
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491T (2012); doi: 10.1117/12.925330
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
The diffusion contribution to thermopower, Sd, is studied for pure semiconducting graphene nanoribbons (GNRs). The electrons are assumed to be scattered by acoustic phonons and optical phonons via deformation potential couplings and edge roughness. Numerical calculations of Sd, as a function of linear carrier density are presented. The relative importance of the carrier scattering mechanisms operative and the effect of subbands on the behaviour of Sd in GNRs are studied.
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A. S. Nissimagoudar, N. S. Sankeshwar, "Diffusion thermopower in graphene nanoribbons: effect of subbands", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491T (15 October 2012); doi: 10.1117/12.925330; http://dx.doi.org/10.1117/12.925330
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KEYWORDS
Phonons

Scattering

Graphene

Acoustics

Diffusion

Edge roughness

Electrons

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