15 October 2012 Diffusion thermopower in suspended graphene
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491U (2012) https://doi.org/10.1117/12.925343
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Diffusion thermopower, Sd, in suspended graphene is investigated for 100 < T< 350 K. Electrons are assumed to be scattered by in-plane and out-of-plane acoustic phonons. Numerical results show that, temperature dependence of Sd, is almost linear for both out-of-plane phonons and in-plane phonons, dominant contribution being from out-of-plane phonons. Comparison with recent available experimental thermopower data [Xu et al arXiv: 1012. 2937v1, (condmat. mes-hall)] obtains a good fit for T< 170K. Sd calculated using Mott expression is found to overestimate the values. Carrier concentration dependence is also studied. Role and relative importance of the two scattering mechanisms is studied.
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R. G. Vaidya, R. G. Vaidya, N. S. Sankeshwar, N. S. Sankeshwar, B. G. Mulimani, B. G. Mulimani, } "Diffusion thermopower in suspended graphene", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491U (15 October 2012); doi: 10.1117/12.925343; https://doi.org/10.1117/12.925343
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