15 October 2012 Effects of size nonuniformity on the optical transitions in a set of realistic InxGa1-xN/GaN quantum dots, having a Gaussian distribution
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491V (2012); doi: 10.1117/12.925882
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
The absorption spectra of semiconductor quantum dots (QDs) are expected to be a series of δ-function-like discrete lines due to the nature of the density of states. In a realistic III–V QD system, the absorption spectra is the superimposition of the contribution from each individual dot and the overall behavior is modeled by considering a Gaussian size distribution. In this paper, we study and present the dependence of the Gaussian nature of the absorption spectra of InXGa1−XN/GaN QD systems on the dot size distribution. The dots were approximated as elongated rectangular boxes having finite potentials at the boundaries. The optical transitions and absorption spectra of InXGa1−XN/GaN QDs that have a square base and the variation of the height is Gaussian, are computed and analyzed
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Sanjib Kabi, Siddhartha Panda, Dipankar Biswas, "Effects of size nonuniformity on the optical transitions in a set of realistic InxGa1-xN/GaN quantum dots, having a Gaussian distribution", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491V (15 October 2012); doi: 10.1117/12.925882; http://dx.doi.org/10.1117/12.925882
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KEYWORDS
Absorption

Quantum dots

Semiconductors

Indium gallium nitride

Gallium nitride

Group III-V semiconductors

Indium nitride

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