15 October 2012 Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristics
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491X (2012) https://doi.org/10.1117/12.926784
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Si nanobar field effect transistors (Si-NBFETs) have emerged as one of the potential candidates in the present era of nano-structured electronic devices. In the current work, the carrier transport in ballistic Si-NBFETs is modeled by constructing a relevant Hamitonian matrix, where the coupling of source and drain with the channel is incorporated by the corresponding self-energy matrices. The Hamiltonian is solved by non-equilibrium Green’s function formalism. The current-voltage characteristics for different width and thickness of the nanobar channel are investigated in detail. Comparative study on drive current and leakage current for various transverse dimensions suggests a cross-sectional design window with an aspect ratio in the range of 1.3-1.6 to be appropriate for superior performance.
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Basudev Nag Chowdhury, Basudev Nag Chowdhury, Puja Singh, Puja Singh, Sanatan Chattopadhyay, Sanatan Chattopadhyay, } "Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristics", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491X (15 October 2012); doi: 10.1117/12.926784; https://doi.org/10.1117/12.926784
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