15 October 2012 Noise characterization of ALD HfO2 MOS capacitors with different metal (Au, Pd and Pt) gates
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854924 (2012) https://doi.org/10.1117/12.926979
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Ultra-thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19 by atomic layer deposition (ALD). The effects of metal gate electrodes (Au, Pd and Pt) on dielectric properties and charge trapping behavior of metal-insulator-semiconductor (MIS) capacitors are investigated. Grazing incidence X-ray diffraction (GIXRD) analysis shows that the conversion from amorphous to crystalline phase start to appear in the HfO2 films when annealed between 400-500°C. The measured ΔVfband hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Low-frequency noise characteristics have been measured using MIS capacitors with contact area ~ 2×10-3 cm2. The power spectral densities (PSD) of the MIS capacitors with metal gate electrodes are compared and their bias dependencies are reported. While a two level random telegraph signal (RTS) is observed at low voltage, multilevel RTS is observed at higher bias voltages.
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S. Mallik, S. Mallik, C. Mukherjee, C. Mukherjee, C. Mahata, C. Mahata, G. K. Dalapati, G. K. Dalapati, D. Z. Chi, D. Z. Chi, C. K. Maiti, C. K. Maiti, } "Noise characterization of ALD HfO2 MOS capacitors with different metal (Au, Pd and Pt) gates", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854924 (15 October 2012); doi: 10.1117/12.926979; https://doi.org/10.1117/12.926979
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