15 October 2012 Enhanced optical absorption in silicon nanowire
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854928 (2012) https://doi.org/10.1117/12.927305
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Silicon nanowires were synthesized on silicon substrate by depositing Ag and Cu particles using electroless metal deposition (EMD) technique followed by HF/Fe(NO3)3 solution based etching at room temperature. Structural and optical characterizations were done on synthesized nanowires. Nanowires of diameter 45 nm to 200 nm having length 2 μm to 4 μm were evident from the scanning electron microscope (SEM) images with maximum aspect ratio 100. Optical absorption study using 400 nm to 1100 nm wavelength by UV/VIS spectrophotometer revealed that synthesized structures absorbed up to 78% of incident radiation in the wavelength range 400 nm to 820 nm, which is much better than that of bulk silicon as they absorbed maximum 67% of the radiation. This observation supports that the material synthesized could be a potential candidate for efficient photovoltaic solar cell and other optoelectronic devices.
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Mehedhi Hasan, Mehedhi Hasan, Md. Fazlul Huq, Md. Fazlul Huq, Zahid Hasan Mahmood, Zahid Hasan Mahmood, Sabina Hussain, Sabina Hussain, } "Enhanced optical absorption in silicon nanowire", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854928 (15 October 2012); doi: 10.1117/12.927305; https://doi.org/10.1117/12.927305
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