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15 October 2012 Characterization of dislocation-based nanotransistors
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854929 (2012) https://doi.org/10.1117/12.927401
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Dislocations are native nanowires. The realization of well-defined dislocation networks allows the electrical characterization of only a small number of dislocations. Different types of dislocations were analyzed by integration into the channel of MOSFETs. A substantial increase of the drain current was proved if only a few dislocations are present in the channel of nMOSFETs. Low-temperature measurements indicate single-electron tunneling on dislocation core defects.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manfred Reiche and Martin Kittler "Characterization of dislocation-based nanotransistors", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854929 (15 October 2012); https://doi.org/10.1117/12.927401
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