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15 October 2012 The role of separate confinement heterostructure layer in designing semiconductor nanostructured optoelectronic devices
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492A (2012) https://doi.org/10.1117/12.927404
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Experiments show that the layer of separate confinement heterostructure (SCH) has a significant influence on the emission spectrum of semiconductor optical amplifiers (SOAs). Reducing the thickness of SCH layer could improve the uniformity of carrier distribution among multiple quantum wells (MQWs). When the thickness of the SCH layer changes from 120 nm to 30 nm, the operation current for SOAs to exhibit the full-width at halfmaximum (FWHM) spectral width of above 270 nm could be reduced from 500 mA to 160 mA.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gagik Shmavonyan and H. G. Asatryan "The role of separate confinement heterostructure layer in designing semiconductor nanostructured optoelectronic devices", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492A (15 October 2012); https://doi.org/10.1117/12.927404
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