15 October 2012 An InGaSb TFET with high ION/IOFF ratio and low circuit leakage power
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492C (2012) https://doi.org/10.1117/12.927414
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
This paper investigates suitable materials for tunnel FETs (TFETs). TFETs where entire body is made of group III-V and IV elements are simulated. In1-xGaxSb TFET with a mole fraction of x=0.75 shows a high ION/IOFF ratio and steeper sub threshold swing. Finally, inverter, buffer, nand and nor gates are simulated using In0.25Ga0.75Sb TFET models and are compared with Silicon (Si) MOSFET gates in terms of delay, dynamic and leakage powers. InGaSb TFET gates have less leakage power compared to Si MOSFET gates.
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Bhargav K. Mamilla, Bhargav K. Mamilla, Sooraj Nair, Sooraj Nair, Bahniman Ghosh, Bahniman Ghosh, } "An InGaSb TFET with high ION/IOFF ratio and low circuit leakage power", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492C (15 October 2012); doi: 10.1117/12.927414; https://doi.org/10.1117/12.927414
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