15 October 2012 Quantum confinement effect on photoluminescence of nanocrystalline ZnO thin films
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492D (2012) https://doi.org/10.1117/12.927415
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Nanocrystalline ZnO thin films with different morphology were grown on silicon substrate by sol-gel process using different zinc acetate sol concentrations. These films were characterized by high resolution XRD, SEM, EDS, photoluminescence (PL) and UV-VIS spectroscopic techniques to reveal their structural, morphological and optical details. The blueshift in strong free excitons recombination peak is observed as the morphology of the film changes from spindle shape to nanorods to clustering of nanorods with increase in sol concentration due to quantum confinement effect in the nc-ZnO thin films.
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Manju Arora, Manju Arora, Santosh Singh, Santosh Singh, Sukhvir Singh, Sukhvir Singh, } "Quantum confinement effect on photoluminescence of nanocrystalline ZnO thin films", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492D (15 October 2012); doi: 10.1117/12.927415; https://doi.org/10.1117/12.927415
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