15 October 2012 Wurtzite InN nanodots on Si(100) by molecular beam epitaxy
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492G (2012) https://doi.org/10.1117/12.927424
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Studies were carried on the growth behavior of InN nanodots by plasma assisted molecular beam epitaxy on bare Si(100) substrates and their structural, optical, electrical properties. The growth was carried out by two different methods such as, (i) mono-step growth process at a low temperature and a (ii) bi-step growth process with the combination of low and high temperatures for the formation of single crystalline nanodots with well defined crystallographic facets due to cluster migration. Low temperature photoluminescence shows a free excitonic (FE) luminescence at 0.80 eV. The Raman spectroscopy and X-ray diffraction studies reveal that the nanodots as well as the film were of wurtzite structure and strain free.
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Thirumaleshwara N. Bhat, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, Mohana K. Rajpalke, Mahesh Kumar, Mahesh Kumar, Basanta Roul, Basanta Roul, S. B. Krupanidhi, S. B. Krupanidhi, } "Wurtzite InN nanodots on Si(100) by molecular beam epitaxy", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492G (15 October 2012); doi: 10.1117/12.927424; https://doi.org/10.1117/12.927424
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