15 October 2012 Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492N (2012); doi: 10.1117/12.925284
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
In this paper, the frequency response of a VLSI compatible Si-CMOS p-i-n photodetector suitable for high-speed, lowvoltage operation is studied. The model is developed considering the effects of diffusion of carriers from the substrate region and the parasitic elements due to the presence of multiple diodes in lateral configuration. The current density is calculated considering square-area photodetector. Results indicate the possibility of optimum designs to maximize 3dB bandwidth.
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Paulami Rakshit, N. R. Das, "Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492N (15 October 2012); doi: 10.1117/12.925284; http://dx.doi.org/10.1117/12.925284
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KEYWORDS
Photodetectors

Diodes

Diffusion

Capacitance

Optical communications

Optical instrument design

Resistance

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