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15 October 2012 Bloch wave analysis for optical band structure of III-nitrides photonic crystals
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492P (2012) https://doi.org/10.1117/12.926762
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
The results of our analytical study on the formation of optical bands of III-Nitride Photonic Crystals are presented in this paper. The analysis is based on the propagation of Bloch waves through microstructured periodic dielectric materials, taking a model of 2D holey crystal of square lattice of GaN as example. Band gaps are opened up for both TE and TM modes in the square lattice for different d/a ratios, 'd' and 'a' being the diameter and lattice constant. The transmission bandwidth is seen to be wider for decreasing air -hole diameter irrespective of the polarization mode of the propagating light. Complete photonic gap may be found for material system of relatively higher contrast ratio.
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K. K. Ghosh, R. Ghosh, and D. Ghosal "Bloch wave analysis for optical band structure of III-nitrides photonic crystals", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492P (15 October 2012); https://doi.org/10.1117/12.926762
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