Translator Disclaimer
15 October 2012 Studies on the dislocation densities of gallium nitride grown by MOCVD
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492Q (2012) https://doi.org/10.1117/12.926857
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Group III-V nitrides have become versatile semiconducting materials for short wavelength LEDs, high temperature transistors. The growth and device processing of these materials are significant due to unusually high bond energies of nitrides. Inspite of high dislocations densities in the order of 109cm-2 the optical and electronic devices based on nitrides show high performance compared to conventional semiconductor devices. Understanding of the behavior of dislocations in these materials structures are very important for the fabrication of devices. In the present study, GaN was grown on sapphire substrates using MOCVD. The dislocation density of GaN has been estimated by wet etching and HRXRD. The results have been correlated with the growth conditions. The dislocation density of the samples was found to be between 3.5x109cm-2 and 5.0x108cm-2.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ravi Loganathan, Mathaiyan Jayasakthi, Ponnusamy Arivazhagan, Kandhasamy Prabakaran, Manavaimaran Balaji, and Krishnan Baskar "Studies on the dislocation densities of gallium nitride grown by MOCVD", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492Q (15 October 2012); https://doi.org/10.1117/12.926857
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Growth and Characterization of AlxGa1-xN on GaN/Al2O3
Proceedings of SPIE (October 14 2012)
Wide-bandgap materials for novel electronic devices and MEMS
Proceedings of SPIE (September 28 1999)
Growth of low defect AlGaN by lateral epitaxy over V...
Proceedings of SPIE (September 20 2006)
MOCVD growth of wide-bandgap nitride semiconductors
Proceedings of SPIE (August 27 2002)

Back to Top