15 October 2012 Photon decay time studies on Al0.45Ga1-0.55N/Al0.18Ga1-0.82N/Al0.45Ga1-0.55N double heterostructures grown on sapphire substrate by MOCVD
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492S (2012); doi: 10.1117/12.926953
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
In the present investigation, AlxGa1-xN/AlyGa1-yN/AlxGa1-xN double heterostructures have been grown on sapphire substrate using MOCVD. The active layer Al0.18Ga0.82N thickness has been changed as 14.8 nm and 23.4 nm by keeping the thickness of the Al0.45Ga0.55N barrier layer as constant. It has been found that full width halfmaxium (FWHM) of (002) undoped GaN without double heterostructures as 352 arc-secs where as for the double heterostructures it is found to be 523 and 483 arc-sec for the active layer thickness of 14.8nm and 23.4nm respectively. The photon decay time was found to be 125, 85 and 87 ps for undoped GaN, Al0.18Ga0.82N of thickness 14.8 nm and 23.4 nm respectively using Time Resolved Photoluminescence (TRPL).It has been observed that the well width has no effect on the radiative decay time which has been reported for the first time.
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Ponnusamy Arivazhagan, Raju Ramesh, Mathaiyan Jayasakthi, Ravi Loganathan, Manavaimaran Balaji, Krishnan Baskar, "Photon decay time studies on Al0.45Ga1-0.55N/Al0.18Ga1-0.82N/Al0.45Ga1-0.55N double heterostructures grown on sapphire substrate by MOCVD", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492S (15 October 2012); doi: 10.1117/12.926953; https://doi.org/10.1117/12.926953
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KEYWORDS
Gallium nitride

Heterojunctions

Picosecond phenomena

Sapphire

Metalorganic chemical vapor deposition

Aluminum

Gallium

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