15 October 2012 40GHz integrated multi quantum well intermixed waveguide photodiodes
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492T (2012) https://doi.org/10.1117/12.926958
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
InGaAsP/InP Multi Quantum Well (MQW) based rib waveguide (WG) multi-wavelength PIN type photodiodes (PD) have been designed for Coarse Wavelength Division Multiplexing (CWDM) systems in which spatial bandgap tailoring have been accomplished by using post growth Fluorine (F) implanted QW Intermixing (QWI) as the integration mechanism. Two separate structures with different composition but same well widths are necessary to detect all CWDM wavelengths in which a In0.5540Ga0.4460As0.9489P0.0511/InP (15nm/15nm) MQW structure has a 14 channel coverage which spans from 1350-1610nm. The thicknesses of the i-MQW layer and different layers constituting the WG have been optimized to give a maximum efficiency of 22%. A carrier tunneling time of 20ps along with the transit time limited bandwidth of 86GHz gives a 3dB bandwidth of 43GHz by optimizing the i-MQW thickness and dopant concentration of the different layers of the waveguide. For all 18 channels insertion loss of 0.4-23dB has been obtained for a detection sensitivity of 21dB. Design issues related to the contact formation for extracting the photo-generated microwave power in such photodiodes have been presented along with few fabrication details of the integration process.
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Tathagata Bhowmick, Tathagata Bhowmick, Utpal Das, Utpal Das, } "40GHz integrated multi quantum well intermixed waveguide photodiodes", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492T (15 October 2012); doi: 10.1117/12.926958; https://doi.org/10.1117/12.926958
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