15 October 2012 Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492W (2012) https://doi.org/10.1117/12.927418
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
The growth of nonpolar a- plane (1 1 -2 0) orientation of the GaN epilayers were confirmed by high resolution x-ray diffraction studies. An in-plane orientation relationship was found to be [0 0 0 1] GaN || [-1 1 0 1] sapphire and [-1 1 0 0] GaN || [1 1 -2 0] sapphire. SEM image shows the reasonably smooth surface. The photoluminescence spectrum shows near band emission (NBE) at 3.439 eV. The room temperature I-V characteristics of Au/a-GaN schottky diode performed. The Schottky barrier height b) and the ideality factor (η) for the Au/a-GaN schottky diode found to be 0.50 eV and 2.01 respectively.
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Mohana K. Rajpalke, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Thirumaleshwara N. Bhat, Mahesh Kumar, Mahesh Kumar, Basanta Roul, Basanta Roul, S. B. Krupanidhi, S. B. Krupanidhi, } "Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492W (15 October 2012); doi: 10.1117/12.927418; https://doi.org/10.1117/12.927418
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