15 October 2012 SiC light emitting quantized structures on silicon by spin-on technique
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492X (2012) https://doi.org/10.1117/12.927427
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
SiC nanocrystals of size 4×30×40nm have been fabricated on Si (100)3° by a low cost spin-on technique in which Htermination produces smaller crystallites but larger crystallite density at the substrate surface steps. Low temperature photoluminescence and atomic force microscopy (AFM) confirms the formation of quantum dashes. It has been observed that the spin speed and H-termination plays a crucial role in the formation of quantized structures on Si.
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Deepak Jain, Deepak Jain, Chatti Rama Sandeep, Chatti Rama Sandeep, Utpal Das, Utpal Das, } "SiC light emitting quantized structures on silicon by spin-on technique", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492X (15 October 2012); doi: 10.1117/12.927427; https://doi.org/10.1117/12.927427
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