Fabrication of Organic complementary inverter

Sarita Yadav; Subhasis Ghosh

doi:10.1117/12.925101

15 October 2012 Fabrication of organic complementary inverter

Sarita Yadav, Subhasis Ghosh

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854931 (2012) https://doi.org/10.1117/12.925101
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

We have fabricated organic complementary inverter comprised of p-channel copper phthalocyanine(CuPc) and n-channel hexadecafluoro phthalocyanine (F₁₆CuPc) based organic thin film transistors (OTFTs) with single Cu metal electrode for both type of OTFTs. The work function of Cu is nearly equal to the highest occupied molecular orbital (HOMO) of CuPc and lowest unoccupied molecular orbital (LUMO) of F₁₆CuPc hence it can be used as source/drain electrode for both type of OTFTs which shows field effect mobilities of CuPc and F₁₆CuPc based OTFTs are 1.27x10^-3cm²V^-1S^-1 and 3.30x10^-4cm²V- ¹S^-1 respectively. Voltage transfer characteristics of complementary inverter show high noise margins and switching voltage around V_DD/2 with a maximum gain in the order of 20.

Citation Download Citation

Sarita Yadav and Subhasis Ghosh "Fabrication of organic complementary inverter", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854931 (15 October 2012); https://doi.org/10.1117/12.925101

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