15 October 2012 Origin and characterization of traps in organic semiconductor thin films
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854932 (2012); doi: 10.1117/12.925269
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Capacitance based spectroscopic techniques have been used to characterize defects in organic Schottky diode based on copper phthalocyanine. Traps have been created by varying the deposition flux. The high deposition flux induces the structural disorder evident from the broad and low intensity X-ray peak. These structural disorders give rise to the traps that clearly shows its signature in C-T characteristics. The step in temperature stimulated capacitance (TSCAP) measurements provides the information of trap level. It is shown that structural disorder is responsible for traps in CuPc thin films and controls the electrical characteristics of two and three terminal devices.
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Akanksha Sharma, Sarita Yadav, Subhasis Ghosh, "Origin and characterization of traps in organic semiconductor thin films", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854932 (15 October 2012); doi: 10.1117/12.925269; http://dx.doi.org/10.1117/12.925269
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KEYWORDS
Capacitance

Thin films

Organic semiconductors

Diodes

Thin film devices

X-rays

Aluminum

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