Effect of Temperature conditions on the Emission of Ion-induced Secondary Electrons from MgO Films

Chandra Bhal Singh; Surajit Sarkar; Vandana Singh; Sanjay K. Ram; Satyendra Kumar

doi:10.1117/12.928033

15 October 2012 Effect of temperature conditions on the emission of ion-induced secondary electrons from MgO films

Chandra Bhal Singh, Surajit Sarkar, Vandana Singh, Sanjay K. Ram, Satyendra Kumar

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854935 (2012) https://doi.org/10.1117/12.928033
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

We report that the vacuum annealing of MgO films at 225°C results in the removal of water based contamination and the secondary electron emission coefficient increases from 0.09 to 0.15. The effective secondary electron emission yield increases from 0.2 to 0.75 at 200 mbar chamber pressure, as temperature increases to 250 °C. The effective secondary electron emission yield at 200, 350 and 800 mbar pressure shows similar trend during the heating as well as cooling of the MgO sample. Thermionic emission, smaller surface band bending and the removal of impurities at high temperature are possible reasons for the increase in secondary electrons of MgO thin films.

Citation Download Citation

Chandra Bhal Singh, Surajit Sarkar, Vandana Singh, Sanjay K. Ram, and Satyendra Kumar "Effect of temperature conditions on the emission of ion-induced secondary electrons from MgO films", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854935 (15 October 2012); https://doi.org/10.1117/12.928033

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