Effect of Capture and Escape Rates of Carriers and Well Parameters on the Performance of Multi-Quantum Well Solar Cell

N. R. Das; Piue Ghosh; Suchismita Mitra

doi:10.1117/12.925342

15 October 2012 Effect of capture and escape rates of carriers and well parameters on the performance of multi-quantum well solar cell

N. R. Das, Piue Ghosh, Suchismita Mitra

Author Affiliations +

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854939 (2012) https://doi.org/10.1117/12.925342
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

We calculate the short-circuit current density for an Al_xGa_1-xAs-GaAs multi-quantum well (MQW) solar cell by solving the rate equations and considering the effects of lifetime, escape time, capture time and transport time of carriers. The contributions from bulk and well regions of the cell are calculated separately. Short-circuit current density and efficiency are computed and plotted for different material and device parameters. Results indicate that the active layer thickness can be optimally chosen to obtain the maximum conversion efficiency keeping other parameters unchanged.

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N. R. Das, Piue Ghosh, and Suchismita Mitra "Effect of capture and escape rates of carriers and well parameters on the performance of multi-quantum well solar cell", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854939 (15 October 2012); https://doi.org/10.1117/12.925342

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KEYWORDS

Quantum wells

Solar cells

Solar energy

Electrons

Absorption

Interfaces

Physics

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