Nanocrystalline cubic Silicon Carbide thin films for the window layer of solar cells deposited by Hot Wire CVD

Himanshu S. Jha; M. Singh; Asha Yadav; . Lalhriatzuala; Dinesh Deva; Pratima Agarwal

doi:10.1117/12.927239

15 October 2012 Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD

Himanshu S. Jha, M. Singh, Asha Yadav, . Lalhriatzuala, Dinesh Deva, Pratima Agarwal

Author Affiliations +

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493D (2012) https://doi.org/10.1117/12.927239
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

Nanocrystalline cubic silicon carbide (nc-3C-SiC) films are deposited using hot wire chemical vapour deposition technique at ~350 °C on glass substrates using SiH₄ /CH₄/H₂ as precursor gases. We investigated the influence of total gas pressure on the structural, optical and transport properties of nc-3C-SiC films. Raman scattering spectra and X-ray diffraction patterns revealed that the film prepared below 2 mbar is nanocrustalline silicon (nc-Si), while at ≥ 2 mbar films are nc-3C-SiC. We achieved high deposition rate (≥ 14-20 nm/min), high optical band gap (3.2-3.4 eV) and high conductivity (~ 10^-4 -10^-2 Ω^-1cm^-1) suitable for window layer for Solar cells.

Citation Download Citation

Himanshu S. Jha, M. Singh, Asha Yadav, . Lalhriatzuala, Dinesh Deva, and Pratima Agarwal "Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493D (15 October 2012); https://doi.org/10.1117/12.927239

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