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15 October 2012 Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493D (2012) https://doi.org/10.1117/12.927239
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Nanocrystalline cubic silicon carbide (nc-3C-SiC) films are deposited using hot wire chemical vapour deposition technique at ~350 °C on glass substrates using SiH4 /CH4/H2 as precursor gases. We investigated the influence of total gas pressure on the structural, optical and transport properties of nc-3C-SiC films. Raman scattering spectra and X-ray diffraction patterns revealed that the film prepared below 2 mbar is nanocrustalline silicon (nc-Si), while at ≥ 2 mbar films are nc-3C-SiC. We achieved high deposition rate (≥ 14-20 nm/min), high optical band gap (3.2-3.4 eV) and high conductivity (~ 10-4 -10-2 Ω-1cm-1) suitable for window layer for Solar cells.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Himanshu S. Jha, M. Singh, Asha Yadav, . Lalhriatzuala, Dinesh Deva, and Pratima Agarwal "Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493D (15 October 2012); https://doi.org/10.1117/12.927239
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