18 December 2012 Mm-wave hybrid narrow-gap hot-carrier and Schottky diodes detector arrays
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Abstract
It is shown that electron heating by electromagnetic radiation in MCT layers can be used for designing of uncooled THz/sub-THz detectors with appropriate for active imaging characteristics (NEP ~2.6•10-10 W/Hz1/2 at ν ~ 140 GHz) and these detectors can be manufactured within well established MCT technologies. This narrow-gap semiconductor can be considered as a material for THz/sub-THz detectors with possibility to be assembled into arrays. The characteristics of those detectors can be controlled and improved by selection of parameters of initial layers, substrate properties and antennas configuration. For FET detectors, even for transistors with rather long channels (~ 1 μm) rather similar characteristics at ν ~ 140 GHz can be obtained too.
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F. Sizov, F. Sizov, V. Zabudsky, V. Zabudsky, A. Golenkov, A. Golenkov, V. Petriakov, V. Petriakov, S. Dvoretski, S. Dvoretski, Z. Tsybrii, Z. Tsybrii, } "Mm-wave hybrid narrow-gap hot-carrier and Schottky diodes detector arrays", Proc. SPIE 8550, Optical Systems Design 2012, 855027 (18 December 2012); doi: 10.1117/12.979768; https://doi.org/10.1117/12.979768
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