Simulation and parameters optimization of high gain silicon micro-pixel avalanche photodiode

Fangkui Sun; Huaiqi Gu; Zhiwei Wang; Lixue Chen

doi:10.1117/12.999907

27 November 2012 Simulation and parameters optimization of high gain silicon micro-pixel avalanche photodiode

Fangkui Sun, Huaiqi Gu, Zhiwei Wang, Lixue Chen

Proceedings Volume 8555, Optoelectronic Devices and Integration IV; 855518 (2012) https://doi.org/10.1117/12.999907
Event: Photonics Asia, 2012, Beijing, China

Abstract

In this paper, the silicon avalanche photodiode (Si-APD) size in micron, which was comprised of separate layer of absorption charge and multiplication (SACM) has been studied. The influence of different thicknesses and different doping concentration of the absorption, charge and multiplication layer on the electric field distribution, current-voltage characteristic and breakdown voltage were simulated and analyzed respectively. The structural parameters optimization has be done with the simulation results. The results show that the better gain and low bias voltage can be achieved with layer thicknesses in micro/nano-sized, which can give a high gain of 10₆ and low bias voltage of 127V. Also the fabrication process conditions has been given.

Citation Download Citation

Fangkui Sun, Huaiqi Gu, Zhiwei Wang, and Lixue Chen "Simulation and parameters optimization of high gain silicon micro-pixel avalanche photodiode", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 855518 (27 November 2012); https://doi.org/10.1117/12.999907

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