Paper
27 November 2012 Blue-green reflection-mode GaAlAs photocathodes
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Abstract
In order to obtain the suitable photocathode which could be applicable for the field of ocean exploration, the p-type zinc (Zn)-doped reflection-mode GaAlAs photocathode sample using exponential-doping technique is grown by metal organic chemical vapor deposition, the Al component of GaAlAs emission layer is designed to be 0.63. After the chemical etching, the photocathode samples are heated in vacuum at high-temperature of 650°C and 600°C respectively, the vacuum variation curves during the heat cleaning are measured, which correspond to the desorption of oxides in the surface of GaAlAs emission layer. The (Cs, O) activation for the photocathodes is executed after heat cleaning. Different proportion of Cs and O is performed on the different photocathode samples. The activation photocurrent curves of two samples with different heat cleaning temperature show that the GaAlAs surface treated by higher heat cleaning temperature is more sensitive to the Cs-O adsorption. The photocathode activated with the larger Cs current has a shorter time to reach the first photocurrent peak, and also obtains a bigger final photocurrent peak. According to the measured spectral response curves, it could be found that a suitable heat cleaning temperature and a moderate Cs/O current ratio are very important to prepare high performance GaAlAs photocathode. The prepared reflection-mode GaAlAs photocathodes are response to the blue-green light, and the cut-off wavelength is at about 580 nm.
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Xinlong Chen, Jing Zhao, Benkang Chang, Muchun Jin, Guanghui Hao, and Yuan Xu "Blue-green reflection-mode GaAlAs photocathodes", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85550R (27 November 2012); https://doi.org/10.1117/12.999271
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Cited by 6 scholarly publications.
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KEYWORDS
Gallium arsenide

Cesium

Aluminum

Quantum efficiency

Wet etching

Etching

Metalorganic chemical vapor deposition

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