27 November 2012 Selective etching of GaAs/Si and InP/GaAs heteroepitaxial wafer
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Abstract
GaAs/Si and InP/GaAs wafers growth was performed by low-pressure metal-organic chemical vapor deposition (LPMOCVD) using a two-step growth method. The wet chemical etching methods were used to characterize the dislocations density. For the GaAs/Si wafer, the chemical etching was performed in molten KOH at temperatures about 350°C and for duration about 1.5min. For the InP/GaAs wafer, the chemical etching was performed in H3PO4: HBr (2:1) solution (Huber etchant) at temperatures about 20°C and for duration about 2min.Then, the morphology of the dislocations characteristics of the etch pit density (EPD) were examined with a high-resolution field-effect scanning electron microscope (SEM). There are some ellipse dislocations pits of the GaAs/Si wafer with a density about 2.0x107cm-2, and sizes ranging from 700nm to 1500nm in diameter, and there are many sunken dislocations pits of the InP/GaAs wafer with a density about 2.0x108cm-2, and sizes ranging from 300nm to 700nm in diameter. So the method has been accurate and convenient to show the dislocations characteristics of metamorphic GaAs/Si and InP/GaAs wafers.
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Xiong Zhen, Qi Wang, Zhi-Gang Jia, Yong-Qing Huang, Xiao-Min Ren, "Selective etching of GaAs/Si and InP/GaAs heteroepitaxial wafer", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85550Y (27 November 2012); doi: 10.1117/12.999497; https://doi.org/10.1117/12.999497
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