Photoemission stability of negative electron affinity GaN photocathode

Junju Zhang; Xiaohui Wang; Wenzheng Yang; Weidong Tang; Xiaoqian Fu; Biao Li; Benkang Chang

doi:10.1117/12.2001125

27 November 2012 Photoemission stability of negative electron affinity GaN photocathode

Junju Zhang, Xiaohui Wang, Wenzheng Yang, Weidong Tang, Xiaoqian Fu, Biao Li, Benkang Chang

Proceedings Volume 8555, Optoelectronic Devices and Integration IV; 85551C (2012) https://doi.org/10.1117/12.2001125
Event: Photonics Asia, 2012, Beijing, China

Abstract

The stability for reflection-mode GaN photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature. We watch that the photocurrent of the cathode decays with time in the vacuum system, and compare the spectral response curves after activation and after degradation. The photocurrent decay mechanism for reflection-mode NEA GaN photocathode was studied by the surface model ［GaN (Mg) :Cs］:O-Cs. The reduction of the effective dipole quantity, which is caused by harmful gases, is the key factor of the photocurrent reduction.

Citation Download Citation

Junju Zhang, Xiaohui Wang, Wenzheng Yang, Weidong Tang, Xiaoqian Fu, Biao Li, and Benkang Chang "Photoemission stability of negative electron affinity GaN photocathode", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551C (27 November 2012); https://doi.org/10.1117/12.2001125

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