You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
27 November 2012Photoemission stability of negative electron affinity GaN photocathode
The stability for reflection-mode GaN photocathode has been investigated by monitoring the photocurrent and the
spectral response at room temperature. We watch that the photocurrent of the cathode decays with time in the vacuum
system, and compare the spectral response curves after activation and after degradation. The photocurrent decay
mechanism for reflection-mode NEA GaN photocathode was studied by the surface model [GaN (Mg) :Cs]:O-Cs. The
reduction of the effective dipole quantity, which is caused by harmful gases, is the key factor of the photocurrent
reduction.
The alert did not successfully save. Please try again later.
Junju Zhang, Xiaohui Wang, Wenzheng Yang, Weidong Tang, Xiaoqian Fu, Biao Li, Benkang Chang, "Photoemission stability of negative electron affinity GaN photocathode," Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551C (27 November 2012); https://doi.org/10.1117/12.2001125