27 November 2012 Photoelectric response performance of nano-graphene film over infrared substrates
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In this paper, we demonstrate the fabrication and measurement of the special nano-graphene-detectors for infrared (IR) radiation. We first transfer the graphene film with a thickness in nanometer scale onto different infrared wafer including Ge, GaAs, Si, and SiO2. The graphene microstructures consist of the transferred graphene film over IR wafer and metal electrodes fabricated over graphene sheet utilized. Because of the special band structure, the fabricated graphene microstructures can generate a large number of electron-hole pairs in a relatively broad wavelength range including ultraviolet (UV), visible, IR, and THz wavelength. In our studies, the current-voltage relationship of the graphene microstructure fabricated, which means that certain direct voltage is applied over two metal electrodes fabricated, is measured before and after illumination graphene microstructure by IR lasers. As tested, the graphene microstructures demonstrate a high optical transmittance in several typical wavelength range mentioned above. We also research the current-voltage performance of the graphene microstructure. The typical result is as follows: when the graphene microstructure is illuminated by the laser beam of 1.1μm wavelength and 0.9W power, an inflection point and remarkable current gain can be discovered. Because of the low light absorption of graphene film, the photocurrent of the graphene microstructure is limited in about 1~3mA/W under certain voltage applied. We believe that the nanometer graphene film and semiconductor materials connected directly with graphene film already forms a kind of special energy band gap, which affect the photocurrent generation.
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Jinhui Gong, Jinhui Gong, Xinyu Zhang, Xinyu Zhang, Furi Lin, Furi Lin, An Ji, An Ji, Changsheng Xie, Changsheng Xie, Tianxu Zhang, Tianxu Zhang, "Photoelectric response performance of nano-graphene film over infrared substrates", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551U (27 November 2012); doi: 10.1117/12.2000621; https://doi.org/10.1117/12.2000621

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