27 November 2012 InGaN/GaN light-emitting diode on GaN/Si template with AlN/GaN superlattice as interlayer
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Abstract
Homoepitaxial grown InGaN/GaN p-i-n junction was deposited on GaN/Si template with AlN/GaN supperlattice as interlayer by molecular beam epitaxy. Different surface microstructure of the p-GaN was affected by the amount of Mg flux. Light-emitting diode was fabricated from the p-i-n junction. The crystal properties of InGaN/GaN p-i-n junction and the related light-emitting diode properties were investigated.
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F. R. Hu, F. R. Hu, Y. J. Wang, Y. J. Wang, H. B. Zhu, H. B. Zhu, Z. C. Liang, Z. C. Liang, } "InGaN/GaN light-emitting diode on GaN/Si template with AlN/GaN superlattice as interlayer", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551W (27 November 2012); doi: 10.1117/12.2001126; https://doi.org/10.1117/12.2001126
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