27 November 2012 BaAl2S4:Eu thin films sputtered by complex target with spark plasma sintering BaS:Eu pellets
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Abstract
Europium doping barium thioaluminates thin films are sputtered by Al complex target embedded with BaS:Eu pellets sintered by spark plasma sintering (SPS). Thin films are deposited by RF-sputtering with complex target. BaAl2S4 is found in each thin film sample while BaAl4S7 appears in the samples only if the amount of BaS:Eu pellets is more than 3. Oxidizing products are BaAl2O4, BaSO4 and Al2O3. The amounts of barium thioaluminates including BaAl2S4 and BaAl4S7 will increase while the one of Al2O3 and BaS decrease if more BaS:Eu pellets are embedded in the target during sputtering. Elements analysis is carried out by EDS. The Al/Ba ratio in thin films will approach 2.0 with more pellets existing in target. PL spectra of thin films are measured and analyzed. The most obvious emission peak in each spectrum is located at about 470nm which corresponds to the 4f65d1→4f7 transition of Eu2+ in BaAl2S4 lattice. The emission peak will approach 470nm as more pellets are embedded in complex target. As a result, it can be concluded that increasing the amounts of BaS:Eu pellets in complex target is an efficient way to achieve better Eu doping barium thioaluminates thin film.
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Dongpu Zhang, Dongpu Zhang, Wei Xue, Wei Xue, Zhinong Yu, Zhinong Yu, "BaAl2S4:Eu thin films sputtered by complex target with spark plasma sintering BaS:Eu pellets", Proc. SPIE 8560, LED and Display Technologies II, 85600H (27 November 2012); doi: 10.1117/12.2001136; https://doi.org/10.1117/12.2001136
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