20 November 2012 Characteristics of p-GaAs/p-AlxGa1-xAs/si-GaAs studied by surface photovoltage
Author Affiliations +
A comparative study of semi-insulating GaAs substrate, p-AlxGa1-x As/ semi-insulating GaAs and p-GaAs/p-AlxGa1-xAs/ semi-insulating GaAs structure has been done using the surface photovoltage (SPV) spectroscopy in metal–insulator–semiconductor (MIS) configuration. Which space charge region (SCR) dominated contribution to SPV in a certain wavelength range was determined. The SPV signals were calculated in a similar way as the open circuit voltage of an illuminated photodiode. One-dimensional continuity equations was adopted for determine the distribution of excess minority carrier. The ideality factor of MIS configuration was investigated in air ambient. The contributions for SPV signal of different layers were discussed in detail. At last the minority carrier diffusion length of different layers and surface or interface recombination velocity were simulated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cui Fan, Cui Fan, X. L. Chen, X. L. Chen, G. Ch. Jiao, G. Ch. Jiao, C. L. Hu, C. L. Hu, Y. Sh. Qian, Y. Sh. Qian, "Characteristics of p-GaAs/p-AlxGa1-xAs/si-GaAs studied by surface photovoltage", Proc. SPIE 8564, Nanophotonics and Micro/Nano Optics, 856423 (20 November 2012); doi: 10.1117/12.2001135; https://doi.org/10.1117/12.2001135


Hot carrier cooling mechanisms in multiple quantum wells
Proceedings of SPIE (February 22 2017)
Copper doped GaAs filters for the 8 to 13...
Proceedings of SPIE (August 29 2004)
Laser cooling of infrared sensors
Proceedings of SPIE (November 03 2004)

Back to Top