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19 October 1987 BaLa1-xNdxGa3O7 - A New Promising Laser Crystal
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Proceedings Volume 0859, Laser Technology II; (1987)
Event: Second Symposium on Laser Technology, 1987, Warsaw, Poland
Single crystals of BaLa1-xNdxGa307 obtained recently by the Czochralski method show a room temperature low threshold laser action associated with the 4F3/2 - 4I11/2 transition of Nd ions. These uniaxial crystals have desired mechanical properties, high thermal conductivity and may be obtained in volumes sufficient to produce the laser rods suitable for conventional sources of optical pumping. Effect of temperature, activator concentration and crystal anisotropy on spectral properties of this new laser active material was studied. Important parameters relative to laser operation of the crystals are reported.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Ryba-Romanowski, S. Golab, B. Jezowska-Trzebiatowska, W. Piekarczyk, and M. Berkowski "BaLa1-xNdxGa3O7 - A New Promising Laser Crystal", Proc. SPIE 0859, Laser Technology II, (19 October 1987);

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