Nd:YAG laser pumped HgGa2S4 parametric oscillator

Kiyoshi Kato; Kentaro Miyata

doi:10.1117/12.2007565

12 March 2013 Nd:YAG laser pumped HgGa₂S₄ parametric oscillator

Kiyoshi Kato, Kentaro Miyata

Proceedings Volume 8604, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XII; 86041K (2013) https://doi.org/10.1117/12.2007565
Event: SPIE LASE, 2013, San Francisco, California, United States

Abstract

By pumping the 8mm long HgGa₂S₄ crystal cut at θ = 67.5° and φ = 0° with the Nd:YAG laser in the double-pass SRO (singly resonant oscillator) scheme, we have generated 410mW output power (80mW at 4.180μm and 330mW at 1.428μm) at 30Hz. The pump to output conversion efficiency was 17%. In addition, by heating the HgGa₂S₄ crystal from 20° to 120° at normal pump incidence (θpm = 67.5°), we have generated the tunable outputs in the 1.413～1.428μm and 4.180～4.311μm range.

Citation Download Citation

Kiyoshi Kato and Kentaro Miyata "Nd:YAG laser pumped HgGa₂S₄ parametric oscillator", Proc. SPIE 8604, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XII, 86041K (12 March 2013); https://doi.org/10.1117/12.2007565

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