26 February 2013 20.8W TM polarized GaAsP laser diodes of 808nm wavelength
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Abstract
In this paper, we present a high power TM Polarized GaAsP laser diode of 808nm wavelength. For high power and narrow beam divergence, an asymmetry broad waveguide structure and a tensile strained GaAsP quantum well were used and the epilayers were grown by low-pressure metalorganic chemical vapor deposition. We have obtained an optical power of 20.86W at 20A without COMD and the vertical farfield of 27°. It is expected that Al-free GaAsP quantum well laser diodes will have good reliability without any facet treatment.
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Peixu Li, Peixu Li, Kai Jiang, Kai Jiang, Xin Zhang, Xin Zhang, Qingmin Tang, Qingmin Tang, Wei Xia, Wei Xia, Shuqiang Li, Shuqiang Li, Zhongxiang Ren, Zhongxiang Ren, Xiangang Xu, Xiangang Xu, } "20.8W TM polarized GaAsP laser diodes of 808nm wavelength", Proc. SPIE 8605, High-Power Diode Laser Technology and Applications XI, 860510 (26 February 2013); doi: 10.1117/12.2002983; https://doi.org/10.1117/12.2002983
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