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26 February 2013 20.8W TM polarized GaAsP laser diodes of 808nm wavelength
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In this paper, we present a high power TM Polarized GaAsP laser diode of 808nm wavelength. For high power and narrow beam divergence, an asymmetry broad waveguide structure and a tensile strained GaAsP quantum well were used and the epilayers were grown by low-pressure metalorganic chemical vapor deposition. We have obtained an optical power of 20.86W at 20A without COMD and the vertical farfield of 27°. It is expected that Al-free GaAsP quantum well laser diodes will have good reliability without any facet treatment.
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Peixu Li, Kai Jiang, Xin Zhang, Qingmin Tang, Wei Xia, Shuqiang Li, Zhongxiang Ren, and Xiangang Xu "20.8W TM polarized GaAsP laser diodes of 808nm wavelength", Proc. SPIE 8605, High-Power Diode Laser Technology and Applications XI, 860510 (26 February 2013);

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