18 February 2013 High power (23W) vertical external cavity surface emitting laser emitting at 1180 nm
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Abstract
We report high power operation of a vertical external-cavity surface-emitting laser (VECSEL) operating around 1180 nm. The gain chip of the VECSEL comprises 10 strain-compensated GaInAs/GaAs quantum wells in a top-emitting configuration. A maximum output power of 23 W was achieved with a mount temperature of about 0 ‡C, and 20.5 W with the mount temperature of about 12 °C. By introducing a birefringent filter inside the laser cavity we demonstrate a tuning range of 67 nm. The gain chip was also used to construct a VECSEL for single-frequency operation. In this configuration, a maximum output power of about 11 W was recorded.
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T. Leinonen, T. Leinonen, S. Ranta, S. Ranta, M. Tavast, M. Tavast, R. Epstein, R. Epstein, G. Fetzer, G. Fetzer, . Sandalphon, . Sandalphon, N. Van Lieu, N. Van Lieu, M. Guina, M. Guina, } "High power (23W) vertical external cavity surface emitting laser emitting at 1180 nm", Proc. SPIE 8606, Vertical External Cavity Surface Emitting Lasers (VECSELs) III, 860604 (18 February 2013); doi: 10.1117/12.2004904; https://doi.org/10.1117/12.2004904
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