18 February 2013 Generation of 200-fs pulses with a short microcavity VECSEL
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Proceedings Volume 8606, Vertical External Cavity Surface Emitting Lasers (VECSELs) III; 86060O (2013); doi: 10.1117/12.2004384
Event: SPIE LASE, 2013, San Francisco, California, United States
Abstract
We report a 1-μm mode-locked VECSEL using a 4.5λ/2 antiresonant microcavity gain structure. The pulses were generated using two different semiconductor saturable absorber mirrors (SESAMs). The first was grown for operation at 1000 nm and the SESAM was heated to 85 °C and the gain cooled to -23 °C to wavelength match the gain and absorber. The second SESAM was designed for 1030 nm and mode-locked operation was achieved with both gain and SESAM at -12 °C. The first approach generated 205-fs pulses with an average power of 2 mW, the second 260-fs pulses with an average power of 13 mW.
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Andrew P. Turnbull, Keith G. Wilcox, C.Robin Head, Oliver J. Morris, Ian Farrer, David A. Ritchie, Anne C. Tropper, "Generation of 200-fs pulses with a short microcavity VECSEL", Proc. SPIE 8606, Vertical External Cavity Surface Emitting Lasers (VECSELs) III, 86060O (18 February 2013); doi: 10.1117/12.2004384; https://doi.org/10.1117/12.2004384
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KEYWORDS
Mode locking

Optical microcavities

Heatsinks

Quantum wells

Pulsed laser operation

Continuous wave operation

Mirrors

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