Laser direct writing of graphene patterns on SiO2/Si substrates

Lisha Fan; Wei Xiong; Yang Gao; Jongbok Park; Yunshen Zhou; Lan Jiang; Yongfeng Lu

doi:10.1117/12.2001405

15 March 2013 Laser direct writing graphene patterns on SiO₂/Si substrates

Lisha Fan, Wei Xiong, Yang Gao, Jongbok Park, Yunshen Zhou, Lan Jiang, Yongfeng Lu

Proceedings Volume 8608, Laser-based Micro- and Nanopackaging and Assembly VII; 86080J (2013) https://doi.org/10.1117/12.2001405
Event: SPIE LASE, 2013, San Francisco, California, United States

Abstract

Direct fabrication of graphene patterns on SiO₂/Si substrates was demonstrated using a single-step laser-induced chemical vapor deposition (LCVD) process. A laser beam was used to irradiate a nickel-coated SiO₂/Si substrate in a methane-hydrogen environment to induce a local temperature rise on the laser focused area. Followed by a rapid cooling process by moving the laser beam, graphene patterns were formed on the laser scanning pathway. Nickel (Ni) layer under graphene patterns was removed by the Ni etchant diffused into the area under the graphene. Laser direct writing graphene patterns on SiO₂/Si substrates was achieved. Energy dispersive X-ray diffraction spectroscopy was used to confirm the removal of Ni layers. The discovery and development of the LCVD growth process provide a route for the rapid fabrication of graphene-based electronic devices.

Citation Download Citation

Lisha Fan, Wei Xiong, Yang Gao, Jongbok Park, Yunshen Zhou, Lan Jiang, and Yongfeng Lu "Laser direct writing graphene patterns on SiO₂/Si substrates", Proc. SPIE 8608, Laser-based Micro- and Nanopackaging and Assembly VII, 86080J (15 March 2013); https://doi.org/10.1117/12.2001405

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