15 March 2013 On the wavelength dependence of femtosecond laser interactions inside band gap solids
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Abstract
3D laser microfabrication inside narrow band gap solids like semiconductors will require the use of long wavelength intense pulses. We perform an experimental study of the multiphoton-avalanche absorption yields and thresholds with tightly focused femtosecond laser beams at wavelengths: 1.3μm and 2.2μm. For comparisons, we perform the experiments in two very different materials: silicon (semiconductor, ∼1.1 eV indirect bandgap) and fused silica (dielectric, ∼9 eV direct bandgap). For both materials, we find only moderate differences while the number of photons required to cross the band gap changes from 2 to 3 in silicon and from 10 to 16 in fused silica.
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S. Leyder, S. Leyder, D. Grojo, D. Grojo, Ph. Delaporte, Ph. Delaporte, M. Lebugle, M. Lebugle, W. Marine, W. Marine, N. Sanner, N. Sanner, M. Sentis, M. Sentis, O. Utéza, O. Utéza, } "On the wavelength dependence of femtosecond laser interactions inside band gap solids ", Proc. SPIE 8611, Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XIII, 861113 (15 March 2013); doi: 10.1117/12.2003545; https://doi.org/10.1117/12.2003545
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