9 March 2013 Silicon backside machining using a nanosecond 2-μm Tm:fiber laser
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Utilizing the transparency of silicon at 2 μm, we are able to ablate the backside of 500-μm thick silicon wafers without causing any damage to the front surface using a novel nanosecond Tm:fiber laser system. We report on our high energy/high peak power nanosecond Tm:fiber laser and provide an initial description of the effects of laser parameters such as pulse duration and energy density on the ablation, and compare thresholds for front and backside machining. The ability to selectively machine the backside of silicon wafers without disturbing the front surface may lead to new processing techniques for advanced manufacturing in solar cell and microelectronics industries.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lawrence Shah, Lawrence Shah, Tobias Bonhoff, Tobias Bonhoff, Thomas Ferhat, Thomas Ferhat, Ashraf F. El-Sherif, Ashraf F. El-Sherif, Mark Ramme, Mark Ramme, Christina C. C. Willis, Christina C. C. Willis, Matthieu Baudelet, Matthieu Baudelet, Pankaj Kadwani, Pankaj Kadwani, Christian Gaida, Christian Gaida, Martin Gebhardt, Martin Gebhardt, Ilya Mingareev, Ilya Mingareev, Martin Richardson, Martin Richardson, "Silicon backside machining using a nanosecond 2-μm Tm:fiber laser", Proc. SPIE 8612, Micromachining and Microfabrication Process Technology XVIII, 861207 (9 March 2013); doi: 10.1117/12.2004878; https://doi.org/10.1117/12.2004878

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