5 March 2013 III-V access waveguides using atomic layer deposition
Author Affiliations +
Normally, the larger refractive index contrast of silicon-on-insulator (SOI) photonics used for transporting highly confined optical modes is not available in compound semiconductor systems because the optically active layer rests upon an epitaxial support layer having a similar refractive index. Here, a semiconductor-under-insulator (SUI) technology for compound semiconductor membrane photonic circuitry is presented. It will be shown that such a technology can facilitate the transport of highly confined optical modes in compound semiconductor systems and is anticipated to be a critical part of future scalable quantum photonics applications.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Khaled Mnaymneh, Khaled Mnaymneh, Simon Frédérick, Simon Frédérick, Dan Dalacu, Dan Dalacu, Jean Lapointe, Jean Lapointe, Philip J. Poole, Philip J. Poole, Robin L. Williams, Robin L. Williams, "III-V access waveguides using atomic layer deposition", Proc. SPIE 8613, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VI, 86130D (5 March 2013); doi: 10.1117/12.2004310; https://doi.org/10.1117/12.2004310

Back to Top