9 March 2013 Analysis of metal-metal contacts in RF MEMS switches
Author Affiliations +
Abstract
This contribution reports on the analysis of metal-metal contacts of MEMS switches. A novel high aspect ratio MEMS fabrication sequence in combination with wafer level packaging is applied for fabrication of an RF MEMS switch with lateral motion. It allows for a relatively large actuation electrode area in a small package, and for high actuation force even with an actuation voltage of 5 V. The focus of this contribution is on the contact behavior. It is shown how operation conditions as like as actuation voltage, RF power, and DC bias influence the contact resistance. The power handling capability and its influence on the contacts, and the intermodulation were investigated also.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steffen Kurth, Steffen Kurth, Sven Voigt, Sven Voigt, Sven Haas, Sven Haas, Andreas Bertz, Andreas Bertz, Christian Kaufmann, Christian Kaufmann, Thomas Gessner, Thomas Gessner, Akira Akiba, Akira Akiba, Koichi Ikeda, Koichi Ikeda, } "Analysis of metal-metal contacts in RF MEMS switches", Proc. SPIE 8614, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII, 861403 (9 March 2013); doi: 10.1117/12.2004775; https://doi.org/10.1117/12.2004775
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

Effects of V additions on the mechanical behavior of Au...
Proceedings of SPIE (January 18 2007)
Reliability enhancement of Ohmic RF MEMS switches
Proceedings of SPIE (February 17 2011)
Design of vertical packaging technology for RF MEMS switch
Proceedings of SPIE (October 14 2012)
Backside contacts for sensor structure packaging
Proceedings of SPIE (March 09 1999)
Integration and packaging of MEMS relays
Proceedings of SPIE (April 09 2000)

Back to Top